PART |
Description |
Maker |
PUMA67F16006A-80E PUMA67F16006A-12E PUMA67F16006AI |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 120NS, SOIC, IND TEMP(EEPROM) 70NS, PDIP, IND TEMP(EEPROM) 120NS, TSOP, COM TEMP(EEPROM) 200NS, PLCC, COM TEMP(EEPROM) DIE(EEPROM) 90NS, PGA, 883C; LEVEL B FULLY COMPLIANT(EEPROM) 120NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM) 120NS, PLCC, IND TEMP(EEPROM) X32号,闪存EEPROM模块 x32 Flash EEPROM Module X32号,闪存EEPROM模块
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Lattice Semiconductor, Corp. Amphenol, Corp.
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5962-8978501YA 5962-8978501PC 5962-8978501YC 5962- |
5962-8978501YA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978501PC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978501YC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-89785022A · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978501ZA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978503KPC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978503KYA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978503KPA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978503KZA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978501PA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-9800201KFC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8981001PA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 6N140A/883B · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 8302401FC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
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Agilent (Hewlett-Packard)
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P2681A-08TT P2681A P2681A-08SR P2681A-08ST P2681A- |
ICs for Inductive Proximity Switches; Package: S--0; VCC (min): 3.1 V; VCC (max): 40.0 V; ICC (max): 0.84 mA; IQ (max): 60.0 mA; Operating Temperature (min): -40.0 degC; General Purpose EMI Reduction IC
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ALSC[Alliance Semiconductor Corporation]
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MAX6754UKLD0-T MAX6755UKLD0-T MAX6756UKLD0-T MAX67 |
Vcc: 5.0 V, active timeout period: 0.02 ms, low-power single/dual-voltage window detector Vcc: 3.0 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector Vcc: 5.0 V, active timeout period: 100 ms-320 ms, low-power, single/dual-voltage window detector Vcc: 5.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector Vcc: 2.5 V, Vcc:1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector Vcc: 3.3 V, Vcc: 1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector Vcc: 3.3 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector Vcc: 3.3 V, active timeout period:185 ms, low-power single/dual-voltage window detector Vcc: 1.8 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector Vcc: 3.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector Vcc: 1.8 V, Vcc:adj, active timeout period:185 ms, low-power single/dual-voltage window detector
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MAXIM - Dallas Semiconductor
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CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
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Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
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Samsung Electronic
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28F002BV-T E28F002BV-B80 |
2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 2-Mbit (128K x 16, 256K x 8) SmartVoltage boot block flash memory family. Access speed Vcc=5V, voltage options (Vpp/Vcc) V=(5 or 12 / 3.3 or 5)
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Intel
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M4-128/64-18VI M4-128/64-18YI M4-128N/64-18JI M4LV |
High Performance E 2 CMOS In-System Programmable Logic High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 128 macrocells, 64 I/Os, 14ns High-performance E2CMOS in-system programmable logic, 5V Vcc, 128 macrocells, 64 I/Os, 14ns High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 192 macrocells, 96 I/Os, 14ns High-performance E2CMOS in-system programmable logic, 5V Vcc, 256 macrocells, 128 I/Os, 14ns High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 256 macrocells, 128 I/Os, 14ns
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Lattice Semiconductor
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MX25R1035F |
Wide Vcc Range, 1M-BIT
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Macronix International
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PMO-6022SN-42UQ |
Sensitivity Range -42 ± 3 dB RL = 2.2 k?Vcc = 2.0v (1 kHz 0 dB = 1 v/Pa)
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Mallory performance clu...
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S34MS16G2 |
16 Gb, 4-Bit ECC, ×8 I/O, and 1.8 V VCC NAND Flash for Embedded
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Cypress Semiconductor
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